Modeling and evaluation of high voltage, high power 4h-Silicon carbide insulated-gate bipolar transistors

In this study the current state of 12 kV, N-channel, 4H-Silicon carbide Insulated-Gate Bipolar transistors (IGBTs) was investigated for use in high voltage and high power applications. These next-generation switches offer many potential benefits to the Army including cost, weight, and space reductions in power electronics as well as an increase in mission capabilities. Silicon carbide provides superior electrical, thermal, and mechanical properties at high voltages, but its fabrication process is relatively new in comparison to silicon. For this work, two methods were used to understand the IGBT’s internal operation, to identify failure mechanisms, and to quantify the device’s performance. The first method involved the creation of a calibrated, physics-based model for device and circuit simulations. The second method involved the development of high voltage infrastructure to enable the collection of laboratory parametric measurements. The impact of this study will be advantageous to the development of robust devices, the creation of new applications, and the improvement of current processes and circuit designs.