Mg Acceptor Level in InN Epilayers Probed by Photoluminescence

dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorSedhain, A.en_US
dc.contributor.authorNepal, N.en_US
dc.contributor.authorKhan, N.en_US
dc.date.accessioned2011-07-11T20:26:10Zen_US
dc.date.accessioned2012-05-03T19:58:05Z
dc.date.available2011-07-11T20:26:10Zen_US
dc.date.available2012-05-03T19:58:05Z
dc.date.issued2007-07-02en_US
dc.identifier.urihttp://hdl.handle.net/2346/22911en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;91-012101en_US
dc.titleMg Acceptor Level in InN Epilayers Probed by Photoluminescenceen
dc.title.alternativeApplied Physics Letters 91, 012101en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emaila.sedhain@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailhx.jiang@ttu.eduen
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