Modeling and simulation of Si and SiC GTO under pulsed conditions

Increasing interest in high action wide pulse width applications for SGTO’s has heightened the need to develop a comprehensive simulation model. The model simulation would be able to predict device operation, aiding in the further development of the SGTO in high action wide pulse width circuits. A means to predict failure and device degradation would lead to higher reliability. The Thesis explores the development of a model for simulation in a high action wide pulse width circuit.