Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown

dc.contributor.authorTemkin, H.en_US
dc.contributor.authorKuryatkov, V.en_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorBorisov, B.en_US
dc.date.accessioned2010-10-18T20:54:01Zen_US
dc.date.accessioned2012-05-13T17:31:18Z
dc.date.available2010-10-18T20:54:01Zen_US
dc.date.available2012-05-13T17:31:18Z
dc.date.issued2005-10-31en_US
dc.description.abstractWe report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45Ga0.55N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.en
dc.identifier.citationEnhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode B. Borisov, S. Nikishin, V. Kuryatkov, and H. Temkin, Appl. Phys. Lett. 87, 191902 (2005), DOI:10.1063/1.2128485en
dc.identifier.urihttp://hdl.handle.net/2346/2054en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseries87;191902en_US
dc.titleEnhanced deep ultraviolet luminescence from AlGaN quantum wells grownen
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailsergey.a.nikishin@ttu.eduen
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