Deep level transient spectroscopy and uniaxial stress system

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dc.creatorYang, Shilian
dc.date.available2011-02-18T19:22:38Z
dc.date.issued1990-12
dc.description.abstractDeep level transient spectroscopy (DLTS) combined with uniaxial stress will not only determine the energy level of a defect center in semiconductor but also tell its symmetry, which is very important for identifying the structure of a defect center. As a thesis for my Master's of Science Degree, this report explains the theories of DLTS and uniaxial stress, our experimental system and some initial results obtained from this system.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/2346/10538en_US
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.rights.availabilityUnrestricted.
dc.subjectLevel-crossing spectroscopyen_US
dc.subjectSemiconductors -- Defectsen_US
dc.titleDeep level transient spectroscopy and uniaxial stress system
dc.typeThesis
thesis.degree.departmentPhysics
thesis.degree.grantorTexas Tech University
thesis.degree.levelMasters
thesis.degree.nameM.S.

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