Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313

Date

2001

Authors

Zollner, S.
Temkin, H.
Faleev, N.
Nikishin, S.
Holtz, Mark
Vanbuskirk, J.
Seon, M.
Prokofyeva, T.

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Publisher

American Physical Society

Abstract

We study the vibrational spectrum of AlN grown on Si~111!. The AlN was deposited using gas-source molecular beam epitaxy. Raman backscattering along the growth c axis and from a cleaved surface perpendicular to the wurtzite c direction allows us to determine the E2 1 , E2 2 , A1~TO!, A1~LO!, and E1~TO! phonon energies. For a 0.8-mm-thick AlN layer under a biaxial tensile stress of 0.6 GPa, these are 249.0, 653.6, 607.3, 884.5, and 666.5 cm21, respectively. By combining the Raman and x-ray diffraction studies, the Raman stress factor of AlN is found to be 26.361.4 cm21/GPa for the E2 2 phonon. This factor depends on published values of the elastic constants of AlN, as discussed in the text. The zero-stress E2 2 energy is determined to be 657.4 60.2 cm21. Fourier-transform infrared reflectance and absorption techniques allow us to measure the E1~TO! and A1~LO! phonon energies. The film thickness ~from 0.06 to 1.0 mm! results in great differences in the reflectance spectra, which are well described by a model using damped Lorentzian oscillators taking into account the crystal anisotropy and the film thickness

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Citation

Vibrational properties of AlN grown on 111 -oriented silicon T. Prokofyeva, M. Seon, J. Vanbuskirk, and M. HoltzS. A. Nikishin, N. N. Faleev, and H. Temkin S. Zollner

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