Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313

dc.contributor.authorZollner, S.en_US
dc.contributor.authorTemkin, H.en_US
dc.contributor.authorFaleev, N.en_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorHoltz, Marken_US
dc.contributor.authorVanbuskirk, J.en_US
dc.contributor.authorSeon, M.en_US
dc.contributor.authorProkofyeva, T.en_US
dc.date.accessioned2010-11-04T21:20:23Zen_US
dc.date.accessioned2012-05-13T17:50:10Z
dc.date.available2010-11-04T21:20:23Zen_US
dc.date.available2012-05-13T17:50:10Z
dc.date.issued2001en_US
dc.description.abstractWe study the vibrational spectrum of AlN grown on Si~111!. The AlN was deposited using gas-source molecular beam epitaxy. Raman backscattering along the growth c axis and from a cleaved surface perpendicular to the wurtzite c direction allows us to determine the E2 1 , E2 2 , A1~TO!, A1~LO!, and E1~TO! phonon energies. For a 0.8-mm-thick AlN layer under a biaxial tensile stress of 0.6 GPa, these are 249.0, 653.6, 607.3, 884.5, and 666.5 cm21, respectively. By combining the Raman and x-ray diffraction studies, the Raman stress factor of AlN is found to be 26.361.4 cm21/GPa for the E2 2 phonon. This factor depends on published values of the elastic constants of AlN, as discussed in the text. The zero-stress E2 2 energy is determined to be 657.4 60.2 cm21. Fourier-transform infrared reflectance and absorption techniques allow us to measure the E1~TO! and A1~LO! phonon energies. The film thickness ~from 0.06 to 1.0 mm! results in great differences in the reflectance spectra, which are well described by a model using damped Lorentzian oscillators taking into account the crystal anisotropy and the film thicknessen
dc.identifier.citationVibrational properties of AlN grown on 111 -oriented silicon T. Prokofyeva, M. Seon, J. Vanbuskirk, and M. HoltzS. A. Nikishin, N. N. Faleev, and H. Temkin S. Zollneren
dc.identifier.urihttp://hdl.handle.net/2346/2089en_US
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.relation.ispartofseries63;en_US
dc.titleVibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313en
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailmark.holtz@ttu.eduen

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