Current response capability of bond wires under pulsed power conditions



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The current handling response of bond wires is of interest for power semiconductor development such as the fabrication of photo-conductive semiconductor switches (PCSSs). Demand on high power electronics keep pushing semiconductors into higher energy densities resulting in higher currents and voltages stresses on the device. Since, every discrete switching device, or integrated circuit (IC), relies on bond wire connections, the knowledge and understanding of how and why bond wires fail it is of most importance for designing the IC packaging. In the extreme case of very high current amplitudes, bond wires haven been pushed to the point of electro-explosion. That is, the wires temperature may increase beyond the vaporization point due to rapid ohmic heating. Obviously, for the sake of successful wire bond, one needs to keep the current action integral below the vaporization energy limit. Yet, even then, the wire may fail at the bond at high current action integrals.

Literature can be found regarding different failure schemes such as lifetime reliability over thousands of continuous shots, or mechanical defects the bond wires undergo during the bonding process such as heel cracks, air pockets and defects at the bond sites. Comparatively, in this paper the bond wires are studied using 8 micro-second up to 24 micro-second pulse widths. The bond wires were tested using peak current densities from 2.510^6 A cm^-2 up to 6.210^6 A cm^-2. The peak limit currents are shown for both Aluminum ribbon bond wires of size 25.4 micro-meter by 254 micro-meter and Gold cylindrical bond wires of diameter size 25.4 micro-meter.



Bond Wire, Current Capability, Gold Wire, Aluminum Ribbon Wire, Failure of Bond Wire