Metallization and Electrical Transport Behaviors of GaSb under High-Pressure

dc.creatorZhang, Guozhao
dc.creatorWu, Baojia
dc.creatorWang, Jia
dc.creatorZhang, Haiwa
dc.creatorLiu, Hao
dc.creatorZhang, Junkai
dc.creatorLiu, Cailong
dc.creatorGu, Guangrui
dc.creatorTian, Lianhua
dc.creatorMa, Yanzhang (TTU)
dc.creatorGao, Chunxiao
dc.date.accessioned2022-08-31T19:34:19Z
dc.date.available2022-08-31T19:34:19Z
dc.date.issued2017
dc.descriptionThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.description.abstractThe high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma. In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.en_US
dc.identifier.citationZhang, G., Wu, B., Wang, J. et al. Metallization and Electrical Transport Behaviors of GaSb under High-Pressure. Sci Rep 7, 2656 (2017). https://doi.org/10.1038/s41598-017-02592-5en_US
dc.identifier.urihttps://doi.org/10.1038/s41598-017-02592-5
dc.identifier.urihttps://hdl.handle.net/2346/90108
dc.language.isoengen_US
dc.subjectElectronic Properties and Materialsen_US
dc.subjectPhase Transitions and Critical Phenomenaen_US
dc.subjectSurfaces, Interfaces, and Thin Filmsen_US
dc.titleMetallization and Electrical Transport Behaviors of GaSb under High-Pressureen_US
dc.typeArticleen_US

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