Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms

dc.creatorSomasundaram, Gokul (TTU)
dc.creatorMayeda, Jill C. (TTU)
dc.creatorSweeney, Clint (TTU)
dc.creatorLie, Donald Y.C. (TTU)
dc.creatorLopez, Jerry (TTU)
dc.date.accessioned2023-08-16T14:38:17Z
dc.date.available2023-08-16T14:38:17Z
dc.date.issued2023
dc.description© 2023 by the authors. cc-by
dc.description.abstractWe demonstrate in this work effective linearization on a millimeter-wave (mm-Wave) broadband monolithic gallium nitride (GaN) power amplifier (PA) using digital predistortion (DPD). The PA used is a two-stage common-source (CS)/2-stack PA that operates in the mm-Wave 5G FR2 band, and it is linearized with the generalized memory polynomial (GMP) DPD and tested using 4G (4th generation) long-term-evolution (LTE) 64-QAM (quadrature amplitude modulation) modulated signals with a PAPR (peak-to-average power ratio) of 8 dB. Measurement results after implementing GMP DPD indicate considerable broadband improvement in the adjacent channel leakage power ratio (ACLR) of 16.9 dB/17.3 dB/16.5 dB/15.1 dB at 24 GHz/28 GHz/37 GHz/39 GHz, respectively, with a common average POUT of 15 dBm using a 100 MHz LTE 64-QAM input signal. At a fixed frequency of 28 GHz, the GaN PA after GMP DPD achieved signal bandwidth-dependent ACLR improvement and root-mean-square (rms) EVM (error vector magnitude) reduction using 20 MHz/40 MHz/80 MHz/100 MHz LTE 64-QAM waveforms with a common average POUT of 15 dBm. The GaN PA thus achieved very good linearization results compared to that in other state-of-the-art mm-Wave PA DPD studies in the literature, suggesting that GMP DPD should be rather effective for linearizing mm-Wave 5G broadband GaN PAs to improve POUT, Linear.
dc.identifier.citationSomasundaram, G., Mayeda, J.C., Sweeney, C., Lie, D.Y.C., & Lopez, J.. 2023. Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms. Electronics (Switzerland), 12(13). https://doi.org/10.3390/electronics12132869
dc.identifier.urihttps://doi.org/10.3390/electronics12132869
dc.identifier.urihttps://hdl.handle.net/2346/95608
dc.language.isoeng
dc.subject4G (4th generation)
dc.subject5G (5th generation)
dc.subjectadjacent channel leakage power ratio (ACLR)
dc.subjectcarrier aggregation (CA)
dc.subjectdigital predistortion (DPD)
dc.subjecterror vector magnitude (EVM)
dc.subjectgallium nitride (GaN)
dc.subjectgeneralized memory polynomial (GMP)
dc.subjectlong-term evolution (LTE)
dc.subjectmillimeter-wave (mm-Wave)
dc.subjectpower amplifier (PA)
dc.subjectquadrature amplitude modulation (qam)
dc.titleEffective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms
dc.typeArticle

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