X-ray diffraction study of AlN/AlGaN short period superlattices

dc.contributor.authorTemkin, H.en_US
dc.contributor.authorHoltz, Marken_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorChandolu, Aen_US
dc.date.accessioned2010-09-22T19:23:13Zen_US
dc.date.accessioned2012-05-13T17:30:46Z
dc.date.available2010-09-22T19:23:13Zen_US
dc.date.available2012-05-13T17:30:46Z
dc.date.issued2007-12-10en_US
dc.description.abstractShort period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.en
dc.identifier.issn1089-7550en_US
dc.identifier.urihttp://hdl.handle.net/2346/2029en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.titleX-ray diffraction study of AlN/AlGaN short period superlatticesen
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailsergey.a.nikishin@ttu.eduen

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