AlNÕAlGaInN superlattice light-emitting diodes at 280 nm

Date

2003-02-01

Authors

Temkin, H.
Nikishin, S.
Holtz, M.
Borisov, B.
Zhu, K.
Kuryatkov, V.
Kipshidze, G.

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American Institute of Physics

Abstract

Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7– 1.1)31018 cm23, with the mobility of 3–4 cm2/V s and electron concentrations of 331019 cm23, with the mobility of 10–20 cm2/V s, at room temperature. These carrier concentrations are sufficient to form effective p – n junctions needed in UV light sources

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Citation

AlN/AlGaInN superlattice light-emitting diodes at 280 nm G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, J. Appl. Phys. 93, 1363 (2003), DOI:10.1063/1.1535255

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