AlNÕAlGaInN superlattice light-emitting diodes at 280 nm

dc.contributor.authorTemkin, H.en_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorHoltz, M.en_US
dc.contributor.authorBorisov, B.en_US
dc.contributor.authorZhu, K.en_US
dc.contributor.authorKuryatkov, V.en_US
dc.contributor.authorKipshidze, G.en_US
dc.date.accessioned2010-10-28T20:09:33Zen_US
dc.date.accessioned2012-05-13T17:44:34Z
dc.date.available2010-10-28T20:09:33Zen_US
dc.date.available2012-05-13T17:44:34Z
dc.date.issued2003-02-01en_US
dc.description.abstractUltraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7– 1.1)31018 cm23, with the mobility of 3–4 cm2/V s and electron concentrations of 331019 cm23, with the mobility of 10–20 cm2/V s, at room temperature. These carrier concentrations are sufficient to form effective p – n junctions needed in UV light sourcesen
dc.identifier.citationAlN/AlGaInN superlattice light-emitting diodes at 280 nm G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, J. Appl. Phys. 93, 1363 (2003), DOI:10.1063/1.1535255en
dc.identifier.urihttp://hdl.handle.net/2346/2078en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseries93;3en_US
dc.titleAlNÕAlGaInN superlattice light-emitting diodes at 280 nmen
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailSergey.Nikishin@coe.ttu.eduen

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