Photonic Properties of Erblum Doped InGaN Alloys Grown on Si (001) Substrates

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dc.contributor.authorZavada, J. M.en_US
dc.contributor.authorTanikawa, T.en_US
dc.contributor.authorHonda, Y.en_US
dc.contributor.authorSawaki, N.en_US
dc.contributor.authorJiang, H. X.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorLi, J.en_US
dc.contributor.authorFeng, I. W.en_US
dc.contributor.authorCao, X. K.en_US
dc.date.accessioned2011-06-30T19:02:40Zen_US
dc.date.accessioned2012-05-03T19:45:46Z
dc.date.available2011-06-30T19:02:40Zen_US
dc.date.available2012-05-03T19:45:46Z
dc.date.issued2011-02-22en_US
dc.identifier.urihttp://hdl.handle.net/2346/22867en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;98-081102en_US
dc.titlePhotonic Properties of Erblum Doped InGaN Alloys Grown on Si (001) Substratesen
dc.title.alternativeApplied Physics Letters 98, 081102en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailhx.jiang@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailjing.li@ttu.eduen
ttu.emailxiangke.cao@ttu.eduen

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