Electrical and Optical Properties of P-Type InGaN

dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorLi, J.en_US
dc.contributor.authorSedhain, A.en_US
dc.contributor.authorPantha, B.N.en_US
dc.date.accessioned2011-07-06T17:44:51Zen_US
dc.date.accessioned2012-05-03T19:45:50Z
dc.date.available2011-07-06T17:44:51Zen_US
dc.date.available2012-05-03T19:45:50Z
dc.date.issued2009-12-29en_US
dc.identifier.urihttp://hdl.handle.net/2346/22883en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesCenter for Nanophotonics;95-261904en_US
dc.titleElectrical and Optical Properties of P-Type InGaNen
dc.title.alternativeApplied Physics Letters 95, 261904en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailhx.jiang@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailjing.li@ttu.eduen
ttu.emaila.sedhain@ttu.eduen
ttu.emailbed.pantha@ttu.eduen

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