Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface

Simple item page
dc.creatorZhang, Haiwa
dc.creatorKe, Feng
dc.creatorLi, Yan
dc.creatorLiu, Cailong
dc.creatorZeng, Yi
dc.creatorYao, Mingguang
dc.creatorHan, Yonghao
dc.creatorMa, Yanzhang (TTU)
dc.creatorGao, Chunxiao
dc.date.accessioned2023-01-31T16:35:17Z
dc.date.available2023-01-31T16:35:17Z
dc.date.issued2015
dc.descriptionThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_US
dc.description.abstractThe interface effect is one of the most important factors that strongly affect the structural transformations and the properties of nano-/submicro-crystals under pressure. However, characterization of the granular boundary changes in materials is always challenging. Here, using tetrakaidecahedral Zn2SnO4 microcrystals as an example, we employed alternating current impedance, X-ray diffraction methods and transmission electron microscopy to elucidate the effect of the interface on the structure and electrical transport behavior of the Zn2SnO4 material under pressure. We clearly show that grain refinement of the initial microcrystals into nanocrystals (approximately 5 nm) occurs at above 12.5 GPa and is characterized by an anomalous resistance variation without a structural phase transition. A new phase transition pathway from the cubic to hexagonal structure occurs at approximately 29.8 GPa in Zn2SnO4. The unexpected grain refinement may explain the new structural transition in Zn2SnO4, which is different from the previous theoretical prediction. Our results provide new insights into the link between the structural transition, interface changes and electrical transport properties of Zn2SnO4.en_US
dc.identifier.citationZhang, H., Ke, F., Li, Y. et al. Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface. Sci Rep 5, 14417 (2015). https://doi.org/10.1038/srep14417en_US
dc.identifier.urihttps://doi.org/10.1038/srep14417
dc.identifier.urihttps://hdl.handle.net/2346/90494
dc.language.isoengen_US
dc.subjectElectronic Properties and Materialsen_US
dc.subjectPhase Transitions and Critical Phenomenaen_US
dc.subjectSemiconductorsen_US
dc.subjectSurfaces, Interfaces, and Thin Filmsen_US
dc.titleAnomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interfaceen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
ma_article.pdf
Size:
3.41 MB
Format:
Adobe Portable Document Format
Description:
Main article with TTU Libraries cover page
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.57 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Faculty Research