Oxygen thermal donor formation in Cz-silicon

dc.creatorJones, Bobby Dale
dc.date.available2011-02-18T21:58:17Z
dc.date.issued1990-12
dc.degree.departmentPhysicsen_US
dc.description.abstractDeep level transient spectroscopy has been used to study the kinetics of oxygen in Czochralski (CZ) grown silicon as a function of annealing time at 450°C. Specifically, the concentrations of the E^ - 0.15 eV and the E^ - 0.07 eV thermal donors have been analyzed. Changes in the energy levels of the thermal donors as a function of anneal time has also been observed. This may be due to previously unknown formative abilities of the thermal donor complex as oxygen atoms accrete to the thermal donor core. Investigations also reveal that these two thermal donors' concentrations grow at different rates. AIso, the concentration of the E(0.15) thermal donor is consistently greater than or equal to the concentration of the E(0.07) thermal donor. However, total thermal donor concentrations are still consistent with previous data obtained by C-V me as ureme nt s.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/2346/17302en_US
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.rights.availabilityUnrestricted.
dc.subjectSilicon-on-insulator technologyen_US
dc.subjectAnnealing of crystalsen_US
dc.subjectSilicon -- Thermal propertiesen_US
dc.subjectSemiconductors -- Defectsen_US
dc.titleOxygen thermal donor formation in Cz-silicon
dc.typeThesis
thesis.degree.departmentPhysics
thesis.degree.disciplinePhysics
thesis.degree.grantorTexas Tech University
thesis.degree.levelMasters
thesis.degree.nameM.S.

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