AlGaInN-based ultraviolet light-emitting diodes grown on Si 111
Date
2002-05-20
Authors
Temkin, H.
Nikishin, S.
Holtz, M.
Borisov, B.
Kuryatkov, V.
Kipshidze, G.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4×1017 cm−3, with a mobility of 8 cm2/Vs, is measured in Al0.4Ga0.6N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334
Description
Keywords
Citation
AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, Appl. Phys. Lett. 80, 3682 (2002), DOI:10.1063/1.1480886