Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes

Date

2002

Authors

Temkin, H.
Chu, S.
Holtz, M.
Nikishin, S.
Borisov, B.
Kuryatkov, V.
Kipshidze, G.

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley

Abstract

Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited on Si(111) or sapphire, followed by a (Al)GaN buffer layer and two superlattice structures, n- and p-type, with the MQW active region placed between them. Room temperature Hall measurements of n- and p-type AlN/AlGaInN superlattice structures show average hole concentrations of 1 × 1018 cm—3, with mobility of 3–4 cm2/Vs, and electron concentrations of 3 × 1019 cm—3, with mobility of 10–20 cm2/Vs. Room temperature electroluminescence spectra of mesa-etched devices show predominant emission at 280 nm.

Description

Keywords

Citation

Kipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S. and Temkin, H. (2002), Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire. physica status solidi (a), 192: 286–291. doi: 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2

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