Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes

dc.contributor.authorTemkin, H.en_US
dc.contributor.authorChu, S.en_US
dc.contributor.authorHoltz, M.en_US
dc.contributor.authorNikishin, S.en_US
dc.contributor.authorBorisov, B.en_US
dc.contributor.authorKuryatkov, V.en_US
dc.contributor.authorKipshidze, G.en_US
dc.date.accessioned2010-11-04T19:41:23Zen_US
dc.date.accessioned2012-05-13T17:48:08Z
dc.date.available2010-11-04T19:41:23Zen_US
dc.date.available2012-05-13T17:48:08Z
dc.date.issued2002en_US
dc.description.abstractUltraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited on Si(111) or sapphire, followed by a (Al)GaN buffer layer and two superlattice structures, n- and p-type, with the MQW active region placed between them. Room temperature Hall measurements of n- and p-type AlN/AlGaInN superlattice structures show average hole concentrations of 1 × 1018 cm—3, with mobility of 3–4 cm2/Vs, and electron concentrations of 3 × 1019 cm—3, with mobility of 10–20 cm2/Vs. Room temperature electroluminescence spectra of mesa-etched devices show predominant emission at 280 nm.en
dc.identifier.citationKipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S. and Temkin, H. (2002), Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire. physica status solidi (a), 192: 286–291. doi: 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2en
dc.identifier.urihttp://hdl.handle.net/2346/2086en_US
dc.language.isoen_USen
dc.publisherWileyen
dc.relation.ispartofseries192;2en_US
dc.titleDeep Ultraviolet AlGaInN-Based Light-Emitting Diodesen
dc.typeArticleen
ttu.departmentNano Tech Center (NTC)en
ttu.emailmark.holtz@ttu.eduen

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