Reverse recovery of 50 V silicon charge plasma pin diode

Date

2020

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Abstract

In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors ‘‘p’’ and ‘‘n’’ plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

Description

© 2020 Institute of Electrical and Electronics Engineers Inc.. All rights reserved. cc-by-nc-nd

Keywords

Charge plasma, PIN diode, Reverse recovery

Citation

Hahmady, S., & Bayne, S.. 2020. Reverse recovery of 50 V silicon charge plasma pin diode. IEEE Access, 8. https://doi.org/10.1109/ACCESS.2020.3023641

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