2023-11-102023-11-102023L. -W. Ouyang, J. C. Mayeda, C. Sweeney, G. Somasundaram, D. Y. C. Lie and J. Lopez, "A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS," 2023 Sixth International Symposium on Computer, Consumer and Control (IS3C), Taichung, Taiwan, 2023, pp. 226-229, doi: 10.1109/IS3C57901.2023.00067.https://doi.org/10.1109/IS3C57901.2023.00067https://hdl.handle.net/2346/96644Under embargo until 03 July 2025. © 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.This paper presents a design of a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. The post-layout parasitic extracted (PEX) simulations suggest the LNA has a 3-dB bandwidth (BW) from 16.9 – 41.8 GHz and a fractional bandwidth (FBW) of 84.8 %, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (NF) ranging from 2.9 – 4.1 dB, and its input-referred 1-dB compression point (IP1dB) of −19.4 dBm at 28 GHz with 15.8 mW DC power consumption. Using the FOM (figure-of-merit) developed from Ref. [1] for broadband LNAs (FOM ≡20×log((Gain[V/V]×BW[GHz])/(PDC[mW]×(F−1)), this LNA achieves a competitive FOM among reported mm-Wave LNAs in literature [1–7].en-USSemiconductor Device ModelingLow-Noise AmplifiersBroadband Amplifiers5G Mobile CommunicationSimulationMillimeter Wave TechnologySilicon-on-InsulatorArticle