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    • Self-heating study of an AlGaN/GaN-based heterostructure field-effect 

      Baca, A.G.; Allerman, A.A.; Tigges, C.P.; Kurtz, S.R.; Berg, J.M.; Holtz, Mark; Kasisomayajula, V.; Ahmad, I. (American Institute of Physics, 2005-05-18)
      We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below svisible 488.0 nmd and near sUV 363.8 nmd GaN band-gap excitation. The shallow penetration depth of the UV ...