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dc.creatorShen, Yu-tang
dc.date.available2011-02-18T22:33:59Z
dc.date.issued1986-05
dc.identifier.urihttp://hdl.handle.net/2346/18453en_US
dc.description.abstractBeginning with the theory of deep traps due to vacancy-impurity pairs, we have developed a theory of deep levels associated with vacancy-impurity complexes in zincblende hosts. We consider triplet complexes which consist of a vacancy that is a nearest-neighbor to two identical, substitutional impurities. Such defects are thought to play an important role in recombination processes in device materials. On the basis of this theory, the chemical trends in such deep levels are predicted for 12 semiconductors and for the semiconductor alloy GaAsi-xPx* These predictions show that a triplet complex may have deep levels which are very different from those of either the isolated impurity or the vacancy-impurity pair. For example, complexing with a second impurity can produce deep levels at energies where neither the pair nor the isolated impurity produce any. Examples of such effects are discussed for GaP and GaAs1-xPx.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.subjectSemiconductors -- Defectsen_US
dc.subjectSemiconductors -- Impurity distributionen_US
dc.subjectGreen's functionsen_US
dc.subjectTriplet stateen_US
dc.titleChemical trends for deep levels associated with vacancy-impurity complexes in semiconductors
dc.typeDissertation
thesis.degree.namePh.D.
thesis.degree.levelDoctoral
thesis.degree.grantorTexas Tech University
thesis.degree.departmentPhysics
dc.rights.availabilityUnrestricted.


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