Now showing items 1-3 of 3
Visible and ultraviolet Raman scattering studies of Si1ÀxGex alloys
(American Institute of Phsyics, 2000-09)
We report Raman studies of the Si–Si phonon band in Si12xGex alloys, where the excitation is by visible and ultraviolet ~351 nm! light. At a wavelength 351 nm, the optical penetration depth is extremely shallow ~'5 nm!. ...
DIELECTRIC FUNCTION OF AlN GROWN ON Si (111) BY MBE
(Materials Research Society, 2000)
We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% ...
Selective growth of high quality GaN on Si 111 substrates
(American Institute of Physics, 2000-04-03)
We demonstrate selective growth of high-quality GaN by gas-source molecular beam epitaxy on Si~111! wafers patterned with SiO2. GaN was grown on wafers having two different buffer layers. The first buffer layer contains ...