Now showing items 1-5 of 5
Plasma enhanced metalorganic chemical vapor deposition of amorphous
(American Institute of Physics, 2001-12-01)
Plasma enhanced deposition of amorphous aluminum nitride ~AlN! using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure ...
Electrical properties of fluorinated amorphous carbon films
(American Institute of Physics, 2001-04-15)
We have studied the capacitance–voltage (C–V), conductance–voltage (G–V), and current– voltage characteristics of fluorinated amorphous carbon (a-C:Fx) films using metal/a-C:Fx /Si and metal/a-C:Fx /metal structures, ...
Determination of oscillator strength of C–F vibrations in fluorinated
(American Institute of Physics, 2001-05-01)
Fluorinated amorphous-carbon (a-CFx) films deposited by plasma-enhanced chemical-vapor deposition were investigated by Fourier transform infrared transmission spectroscopy and Rutherford backscattering. The proportionality ...
Structural properties of fluorinated amorphous carbon films
(American Institute of Physics, 2001-01-01)
Fluorinated amorphous carbon films have been deposited in a plasma-enhanced chemical vapor deposition system, and the optical properties examined by Fourier transform infrared and ultraviolet-visible absorption spectroscopy. ...
Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313
(American Physical Society, 2001)
We study the vibrational spectrum of AlN grown on Si~111!. The AlN was deposited using gas-source molecular beam epitaxy. Raman backscattering along the growth c axis and from a cleaved surface perpendicular to the wurtzite ...