Browsing Center for Nanophotonics by Issue Date
Now showing items 21-40 of 92
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Deep Impurity Transitions Involving Cation Vacancies and Complexs in AlGaN Alloys
(American Institute of Physics, 2005-05-26) -
Unintentionally Doped N-Type Al_.67_Ga_.33_N Epilayers
(American Institute of Physics, 2005-06-20) -
Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys
(American Institute of Physics, 2005-12-07) -
GaN Light-Emitting Triodes for High-Efficiency Hole Injection and Light Emission
(Light-Emitting Diodes: Research, Manufacturing, and Applications X, 2006) -
Determination of Energy-Band Offsets Between GaN and AlN Using Excitonic Luminescence Transition in AlGaN Alloys
(American Institute of Physics, 2006-01-09) -
Exciton Localization in AlGaN Alloys
(American Institute of Physics, 2006-02-06) -
AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers
(American Institute of Physics, 2006-02-16) -
Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals
(American Institute of Physics, 2006-03-29) -
Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates
(American Institute of Physics, 2006-04-26) -
Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_
(American Institute of Physics, 2006-05-04) -
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30) -
Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN
(American Institute of Physics, 2006-08-25) -
Photoluminescence Studies of Impurity Transitions in AlGaN Alloys
(American Institute of Physics, 2006-08-29) -
Growth and Photoluminescence Studies of Al rich AlN/Al_x_Ga_1-x_N Quantum Wells
(American Institute of Physics, 2006-09-29) -
Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition
(American Institute of Physics, 2006-10-09) -
Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers
(American Institute of Physics, 2006-10-10) -
Effects of Compressive Strain on Optical Properties of In_x_Ga_1-x_N/GaN Quantum Wells
(American Institute of Physics, 2006-10-13) -
Correlation Between Optical and Electrical properties of Mg-doped AlN Epilayers
(American Institute of Physics, 2006-10-13) -
Growth and Photoluminescence Studies of Zn-Doped AlN Epilayers
(American Institute of Physics, 2006-11-10) -
Spectroscopic Studies of Er-Centers in MOCVD Grown GaN Layers Highly Doped with Er
(Elsevier B.V., 2007)