Browsing Center for Nanophotonics by Issue Date

Deep Impurity Transitions Involving Cation Vacancies and Complexs in AlGaN Alloys

Jiang, H.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B. (American Institute of Physics, 2005-05-26)

Unintentionally Doped N-Type Al_.67_Ga_.33_N Epilayers

Jiang, H.X.; Lin, J.Y.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2005-06-20)

Tempertature and Compositional Dependence of the Energy Band Gap of AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2005-12-07)

GaN Light-Emitting Triodes for High-Efficiency Hole Injection and Light Emission

Schubert, E. Fred; Jiang, H.X.; Zavada, J.M.; Gessmann, Thomas; Park, Yongjo; Sone, Cheolsoo; Cho, Jaehee; Luo, Hong; Xi, J.Q.; Kim, Jong Kyu (Light-Emitting Diodes: Research, Manufacturing, and Applications X, 2006)

Determination of Energy-Band Offsets Between GaN and AlN Using Excitonic Luminescence Transition in AlGaN Alloys

Senger, R.T.; Koleske, D.D.; Jiang, H.X.; Lin, J.Y.; Bajaj, K.K.; Mahajan, S.; Westmeyer, A.N. (American Institute of Physics, 2006-01-09)

Exciton Localization in AlGaN Alloys

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2006-02-06)

AlGaN/GaN/AlN Quantum-Well Field-Effect Transistors with Highly Resistive AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Fan, Z.Y. (American Institute of Physics, 2006-02-16)

Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Shakya, J.; Nepal, N. (American Institute of Physics, 2006-03-29)

Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates

Jiang, H.X.; Lin, J.Y.; Li, J. (American Institute of Physics, 2006-04-26)

Thermally Stable Schottky Contacts on N-Type GaN Using ZrB_2_

Isaacs-Smith, T.; Williams, J.R.; Jiang, H.X.; Lin, J.Y.; Martin, P.; Oder, T.N. (American Institute of Physics, 2006-05-04)

Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2006-06-30)

Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN

Jiang, H.X.; Lin, J.Y.; Li, J.; LeBoeuf, S.F.; Piao, H.; Cao, X.A. (American Institute of Physics, 2006-08-25)

Photoluminescence Studies of Impurity Transitions in AlGaN Alloys

Jiang, H.X.; Lin, J.Y. (American Institute of Physics, 2006-08-29)

Growth and Photoluminescence Studies of Al rich AlN/Al_x_Ga_1-x_N Quantum Wells

Chow, W.W.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Al Tahtamouni, T.M. (American Institute of Physics, 2006-09-29)

Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2006-10-09)

Ultraviolet Photoluminescence from Gd-Implanted AlN Epilyers

Gwilliam, R.; Pearton, S.J.; Abernathy, C.R.; Thaler, G.T.; Hite, J.; Hommerich, U.; Brown, E.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2006-10-10)

Effects of Compressive Strain on Optical Properties of In_x_Ga_1-x_N/GaN Quantum Wells

Li, J.; Khan, N. (American Institute of Physics, 2006-10-13)

Correlation Between Optical and Electrical properties of Mg-doped AlN Epilayers

Jiang, H.X.; Lin, J.Y.; Al Tahtamouni, T.M.; Ugolini, C.; Nepal, N.; Nakarmi, M.L. (American Institute of Physics, 2006-10-13)

Growth and Photoluminescence Studies of Zn-Doped AlN Epilayers

Nakarmi, M.L.; Jiang, H.X.; Lin, J.Y.; Jang, H.U.; Nepal, N. (American Institute of Physics, 2006-11-10)

Spectroscopic Studies of Er-Centers in MOCVD Grown GaN Layers Highly Doped with Er

Zavada, J.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Kozanecki, A.; Glukhanyuk, V.; Stachowicz, M.; Makarova, K. (Elsevier B.V., 2007)