Enhanced luminescence from AlxGa._xN/AlyGa ._yN quantum wells grown by gas source molecular beam epitaxy with ammonia
Date
2007-02-08Author
Holtz, Mark
Wraback, Michael
Shen, Hongen
Sampath, Anand
Sarney, Wendy
Garrett, Gregory
Borisov, Boris
Nikishin, Sergey
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We report the structural and optical properties of AlxGaJ.xN/AlyGal_yN quantum wells (QWs) structures grown by gas
source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of
AlyGal_yN, O.3<y<0.45, wells (nominally 2-4 nm thick) and AlxGa]_xN, O.55<x<1, barriers (nominally 5 nm thick). All
the structures were completed with a 10 run thick cap layer of AIN. We observed a significant enhancement in the
cathodoluminescence intensities and longer photoluminescence lifetimes for OW structures grown in the 3D mode, as
confirmed by spotty reflection high energy electron diffraction patterns. These effects are attributed to the formation of
AlGaN quantum dots in the well materials.
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