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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence
(American Institute of Physics, 2009-08-14)
Beryllium Acceptor Binding Energy in AlN
(American Institute of Physics, 2008-10-07)
High Mobility InN Epilyers Grown on AlN Epilayer Templates
(American Institute of Physics, 2008-04-28)
Direct Hydrogen Gas Generation by Using InGaN Epilayers as Working Electrodes
(American Institute of Physics, 2008-10-24)
Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN
(American Institute of Physics, 2006-08-25)
Nature of Deep Center Emissions in GaN
(American Institute of Physics, 2010-04-12)
Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates
(American Institute of Physics, 2006-04-26)
Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy
(American Institute of Physics, 2006-06-30)
Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes
(American Institute of Physics, 2005-02-25)
Exciton Localization in AlGaN Alloys
(American Institute of Physics, 2006-02-06)