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Probing Exciton-Phonon Interaction in AIN Epilayers by Photoluminescence 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2009-08-14)

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Beryllium Acceptor Binding Energy in AlN 

Jiang, H.X.; Lin, J.Y.; Li, J.; Tahtamouni, T.M. Al; Sedhain, A. (American Institute of Physics, 2008-10-07)

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High Mobility InN Epilyers Grown on AlN Epilayer Templates 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A.; Khan, N. (American Institute of Physics, 2008-04-28)

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Direct Hydrogen Gas Generation by Using InGaN Epilayers as Working Electrodes 

Jiang, H.X.; Lin, J.Y.; Li, J. (American Institute of Physics, 2008-10-24)

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Effects of Plasma Treatment on the Ohmic Characteristics of Ti/Al/Ti/Au Contacts to n-AlGaN 

Jiang, H.X.; Lin, J.Y.; Li, J.; LeBoeuf, S.F.; Piao, H.; Cao, X.A. (American Institute of Physics, 2006-08-25)

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Nature of Deep Center Emissions in GaN 

Jiang, H.X.; Lin, J.Y.; Li, J.; Sedhain, A. (American Institute of Physics, 2010-04-12)

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Growth of III-Nitride Photonic Structures on Large Area Silicon Substrates 

Jiang, H.X.; Lin, J.Y.; Li, J. (American Institute of Physics, 2006-04-26)

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Higher Lying Conduction Band in GaN and AlN Probed by Photoluminescence Spectroscopy 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2006-06-30)

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Polarization of III-Nitride Blue and Ultraviolet Light-Emitting Diodes 

Jiang, H.X.; Lin, J.Y.; Li, J.; Kim, K.H.; Knabe, K.; Shakya, J. (American Institute of Physics, 2005-02-25)

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Exciton Localization in AlGaN Alloys 

Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Li, J.; Nepal, N. (American Institute of Physics, 2006-02-06)
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Jiang, H.X. (28)
Li, J. (28)
Lin, J.Y. (27)Pantha, B.N. (10)Sedhain, A. (8)Nakarmi, M.L. (7)Dahal, R. (6)Nepal, N. (5)Nam, K.B. (3)BenMoussa, A. (2)... View MoreDate Issued2010 (6)2009 (5)2008 (6)2007 (2)2006 (5)2005 (2)2004 (2)

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