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Optical and Magnetic Behavior of Erbium-Doped GaN Epilayers by Metal-Organic Chemical Vapor Deposition

Hommerich, U.; Brown, E.E.; Pearton, S.J.; Abernathy, C.R.; Hite, J.; Davies, R.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Nepal, N.; Zavada, J.M. (American Institute of Physics, 2007-08-01)

GaN Light-Emitting Triodes for High-Efficiency Hole Injection and Light Emission

Schubert, E. Fred; Jiang, H.X.; Zavada, J.M.; Gessmann, Thomas; Park, Yongjo; Sone, Cheolsoo; Cho, Jaehee; Luo, Hong; Xi, J.Q.; Kim, Jong Kyu (Light-Emitting Diodes: Research, Manufacturing, and Applications X, 2006)

Erbium -Doped GaN Epilayers Synthesized by Metal-Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2006-10-09)

Excitation Dynamics of the 1.54 Micrometer Emission in Er Doped GaN Synthesized by Metal Organic Chemical Vapor Deposition

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Ugolini, C. (American Institute of Physics, 2007-02-01)

Optical Properties of the Nitrogen Vacancy in AlN Epilayers

Wilson, R.G.; Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Nakarmi, M.L.; Nam, K.B.; Nepal, N. (American Institute of Physics, 2004-02-16)

Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2009-09-16)

Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped

Zavada, J.M.; Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Dahal, R. (American Institute of Physics, 2008-07-21)

Optical Enhancement of Room Temperature Ferromagnetism in Er-Doped GaN Epilayers

Jiang, H.X.; Lin, J.Y.; Sedhain, A.; Ugolini, C.; Dahal, R.; Zavada, J.M.; Nepal, N. (American Institute of Physics, 2009-07-14)

Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

Hertog, B.; Chow, P.; Jiang, H.X.; Lin, J.Y.; Nepal, N.; Jin, S.X.; Zavada, J.M. (American Institute of Physics, 2004-02-16)

Luminescence Propertes of Erbium Doped InGaN Epilayers

Jiang, H.X.; Lin, J.Y.; Ugolini, C.; Zavada, J.M.; Sedhain, A. (American Institute of Physics, 2009-07-30)