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dc.creatorRoberson, Mark A.
dc.date.available2011-02-18T18:53:09Z
dc.date.issued1993-12
dc.identifier.urihttp://hdl.handle.net/2346/8428en_US
dc.description.abstractAs device sizes have decreased, the effect of localized defects on semiconductor performance has increased. Many point defects are electrically active and can therefore directly affect the charge carrier concentrations and lifetimes of devices. This makes understanding the behavior of these defects important. This dissertation involves theoretical work on localized defects (impurities and intrinsic defects) in the elemental and compound semiconductors C, 5f, -BP, AlP., SiC, and BN. The theoretical level is approximate HF, ab-initio Hartree-Fock (HF), and post-HF treatments in electron correlation. The host crystals are modeled with molecular clusters.
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTexas Tech Universityen_US
dc.subjectSiliconen_US
dc.subjectSemiconductorsen_US
dc.titleLight interstitials and their interactions in semiconductors
dc.typeDissertation
thesis.degree.namePh.D.
thesis.degree.levelDoctoral
thesis.degree.disciplinePhysics
thesis.degree.grantorTexas Tech University
thesis.degree.departmentPhysics
dc.degree.departmentPhysicsen_US
dc.rights.availabilityUnrestricted.


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