Deep level transient spectroscopy and uniaxial stress system

Date

1990-12

Journal Title

Journal ISSN

Volume Title

Publisher

Texas Tech University

Abstract

Deep level transient spectroscopy (DLTS) combined with uniaxial stress will not only determine the energy level of a defect center in semiconductor but also tell its symmetry, which is very important for identifying the structure of a defect center. As a thesis for my Master's of Science Degree, this report explains the theories of DLTS and uniaxial stress, our experimental system and some initial results obtained from this system.

Description

Keywords

Level-crossing spectroscopy, Semiconductors -- Defects

Citation