Performance of power MOSFETs at cryogenic temperatures

Date

1996-05

Journal Title

Journal ISSN

Volume Title

Publisher

Texas Tech University

Abstract

The maximum power level that can be controlled by power MOSFETs is limited by the maximum allowable power dissipation. Recent publications^^ indicate, that operation of power MOSFETs at cryogenic temperatures will significantly (by more than an order of magnitude) reduce losses and increase their switching speed and power handling capability. The losses of power MOSFETs are conduction losses and switching losses due to either mechanism are reduced at cryogenic temperatures.

Description

Keywords

Metal oxide semiconductor field-effect transistors, Power transistors, Low temperatures

Citation