Plasma etching of AlNÕAlGaInN superlattices for device fabrication

Date

2002

Authors

Holtz, Mark
Temkin, H.
Nikishin, S.
Kipshidze, G.
Borisov, B.
Kuryatkov, V.
Zhu, K.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

We report a study of plasma etching of GaN, AlN, and AlN/AlGaN superlattices for the processing of deep ultraviolet light emitting diodes. Etching was carried out using inductively coupled plasma of chlorine diluted with argon under reactive ion etching conditions. Using parameters selected for etch rate, anisotropy, and surface smoothness, we study etching of n- and p-type superlattices. The former etches at a rate of 250 nm/min, which is intermediate to that of AlN and GaN, while the latter exhibits a slower etch rate of 60 nm/min. Based on these studies, we prepare low-leakage p–n junctions and mesa light emitting diodes with peak emission at 280 nm

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Citation

Plasma etching of AlN/AlGaInN superlattices for device fabrication K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 81, 4688 (2002), DOI:10.1063/1.1527986

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