Effects of lattice relaxation on deep levels in semiconductors
dc.creator | Li, Wei-gang | |
dc.date.available | 2011-02-18T19:25:40Z | |
dc.date.issued | 1991-05 | |
dc.description.abstract | . | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/2346/10732 | en_US |
dc.language.iso | eng | |
dc.publisher | Texas Tech University | en_US |
dc.rights.availability | Unrestricted. | |
dc.subject | Impurity centers | en_US |
dc.subject | Semiconductors -- Defects | en_US |
dc.subject | Electron donor-acceptor complexes | en_US |
dc.subject | Semiconductors -- Electric properties | en_US |
dc.title | Effects of lattice relaxation on deep levels in semiconductors | |
dc.type | Dissertation | |
thesis.degree.department | Physics | |
thesis.degree.grantor | Texas Tech University | |
thesis.degree.level | Doctoral | |
thesis.degree.name | Ph.D. |
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