Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7)
| dc.contributor.author | Jiang, H.X. | en_US |
| dc.contributor.author | Lin, J.Y. | en_US |
| dc.contributor.author | Zhu, K. | en_US |
| dc.contributor.author | Kim, K.H. | en_US |
| dc.contributor.author | Nakarmi, M.L. | en_US |
| dc.date.accessioned | 2011-07-25T18:26:06Z | en_US |
| dc.date.accessioned | 2012-05-03T20:17:29Z | |
| dc.date.available | 2011-07-25T18:26:06Z | en_US |
| dc.date.available | 2012-05-03T20:17:29Z | |
| dc.date.issued | 2004-10-25 | en_US |
| dc.identifier.uri | http://hdl.handle.net/2346/22947 | en_US |
| dc.language.iso | en_US | en |
| dc.publisher | American Institute of Physics | en |
| dc.title | Transport Properties of Highly Conductive N-type Al-rich Al_x_Ga_1-x_N (x>=0.7) | en |
| dc.title.alternative | Applied Physics Letters Volume 85 No. 17 | en |
| dc.type | Article | en |
| ttu.department | Center for Nanophotonics | en |
| ttu.email | jingyu.lin@ttu.edu | en |
| ttu.email | hx.jiang@ttu.edu | en |