Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes

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dc.contributor.authorHertog, B.en_US
dc.contributor.authorChow, P.en_US
dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorNepal, N.en_US
dc.contributor.authorJin, S.X.en_US
dc.contributor.authorZavada, J.M.en_US
dc.date.accessioned2011-07-25T20:32:56Zen_US
dc.date.accessioned2012-05-03T19:45:47Z
dc.date.available2011-07-25T20:32:56Zen_US
dc.date.available2012-05-03T19:45:47Z
dc.date.issued2004-02-16en_US
dc.identifier.urihttp://hdl.handle.net/2346/22955en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.titleElectroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodesen
dc.title.alternativeApplied Physics Letters Volume 84 No. 7en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailhx.jiang@ttu.eduen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailsixuan.jin@ttu.eduen

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