247 nm solar-blind ultraviolet p-i-n photodetector
| dc.contributor.author | Holtz, Mark | en_US |
| dc.contributor.author | Song, D.Y. | en_US |
| dc.contributor.author | Sokolovskii, G. | en_US |
| dc.contributor.author | Kuchinskii, V. | en_US |
| dc.contributor.author | Asomoza, R. | en_US |
| dc.contributor.author | Kudryavtsev, Yu. | en_US |
| dc.contributor.author | Nikishin, S. | en_US |
| dc.contributor.author | Borisov, B.A. | en_US |
| dc.contributor.author | Kuryatkov, V. | en_US |
| dc.date.accessioned | 2010-10-06T19:52:31Z | en_US |
| dc.date.accessioned | 2012-05-13T17:30:45Z | |
| dc.date.available | 2010-10-06T19:52:31Z | en_US |
| dc.date.available | 2012-05-13T17:30:45Z | |
| dc.date.issued | 2006-11-06 | en_US |
| dc.description.abstract | We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN/Al0.08Ga0.92N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 m diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of 3 pA/cm2 and high zero-bias resistance of 6 1014 . At 10 V reverse bias the observed responsivity is 62 mA/W. | en |
| dc.identifier.citation | 247 nm solar-blind ultraviolet p-i-n photodetector | en |
| dc.identifier.uri | http://hdl.handle.net/2346/2043 | en_US |
| dc.language.iso | en_US | en |
| dc.publisher | American Institute of Physics | en |
| dc.relation.ispartofseries | 100;096104 | en_US |
| dc.title | 247 nm solar-blind ultraviolet p-i-n photodetector | en |
| dc.type | Article | en |
| ttu.department | Nano Tech Center (NTC) | en |
| ttu.email | mark.holtz@ttu.edu | en |