Reversible metallization and carrier transport behavior of In2S3 under high pressure

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dc.creatorLi, Yuqiang
dc.creatorGao, Yang (TTU)
dc.creatorXiao, Ningru
dc.creatorNing, Pingfan
dc.creatorYu, Liyuan
dc.creatorZhang, Jianxin
dc.creatorNiu, Pingjuan
dc.creatorMa, Yanzhang (TTU)
dc.creatorGao, Chunxiao
dc.date.accessioned2023-07-13T19:12:44Z
dc.date.available2023-07-13T19:12:44Z
dc.date.issued2018
dc.description© 2018 Author(s). cc-by
dc.description.abstractThe electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.
dc.identifier.citationLi, Y., Gao, Y., Xiao, N., Ning, P., Yu, L., Zhang, J., Niu, P., Ma, Y., & Gao, C.. 2018. Reversible metallization and carrier transport behavior of In2S3 under high pressure. AIP Advances, 8(11). https://doi.org/10.1063/1.5054752
dc.identifier.urihttps://doi.org/10.1063/1.5054752
dc.identifier.urihttps://hdl.handle.net/2346/94922
dc.language.isoeng
dc.titleReversible metallization and carrier transport behavior of In2S3 under high pressure
dc.typeArticle

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