A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS
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Abstract
This paper presents a design of a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. The post-layout parasitic extracted (PEX) simulations suggest the LNA has a 3-dB bandwidth (BW) from 16.9 – 41.8 GHz and a fractional bandwidth (FBW) of 84.8 %, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (NF) ranging from 2.9 – 4.1 dB, and its input-referred 1-dB compression point (IP1dB) of −19.4 dBm at 28 GHz with 15.8 mW DC power consumption. Using the FOM (figure-of-merit) developed from Ref. [1] for broadband LNAs (FOM ≡20×log((Gain[V/V]×BW[GHz])/(PDC[mW]×(F−1)), this LNA achieves a competitive FOM among reported mm-Wave LNAs in literature [1–7].