Acceptor-Bound Exciton Transition in Mg-Doped AlN Epilayers

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dc.contributor.authorJiang, H.X.en_US
dc.contributor.authorLin, J.Y.en_US
dc.contributor.authorNam, K.B.en_US
dc.contributor.authorNakarmi, M.L.en_US
dc.contributor.authorNepal, N.en_US
dc.date.accessioned2011-07-25T19:19:05Zen_US
dc.date.accessioned2012-05-03T20:09:50Z
dc.date.available2011-07-25T19:19:05Zen_US
dc.date.available2012-05-03T20:09:50Z
dc.date.issued2004-09-20en_US
dc.identifier.urihttp://hdl.handle.net/2346/22949en_US
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.titleAcceptor-Bound Exciton Transition in Mg-Doped AlN Epilayersen
dc.title.alternativeApplied Physics Letters Volume 85 No. 12en
dc.typeArticleen
ttu.departmentCenter for Nanophotonicsen
ttu.emailjingyu.lin@ttu.eduen
ttu.emailhx.jiang@ttu.eduen

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